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Infineon Technologies Electronic Components Datasheet

BAS3005B Datasheet

Medium Power AF Schottky Diode

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Medium Power AF Schottky Diode
Forward current: 0.5 A
Reverse voltage: 30 V
Low capacitance, low reverse current
For high efficiency DC/DC conversion,
fast switching, protecting and
clamping applications
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3005B...
BAS3005B-02V

Type
BAS3005B-02V
Package
SC79
Configuration
single
Marking
3
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)
VR
IF
Average rectified forward current (50/60Hz, sinus) IFAV
Repetitive peak forward current
(tp 1 ms, D 0.25)
I FRM
Non-repetitive peak surge forward current
(t 10ms)
I FSM
Value
30
500
500
3.5
5
Unit
V
mA
mA
A
Junction temperature
Tj 150
Operating temperature range
Top -55 ... 125
www.DSattoaSrahegeet4Ute.cmomperature
Tstg -65 ... 150
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
°C
1 2007-04-19


Infineon Technologies Electronic Components Datasheet

BAS3005B Datasheet

Medium Power AF Schottky Diode

No Preview Available !

BAS3005B...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
80
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
IR
VR = 5 V
-15
VR = 10 V
- 2 10
VR = 30 V
- 5 25
Forward voltage2)
VF
IF = 1 mA
- 200 250
IF = 10 mA
- 260 310
IF = 100 mA
- 360 410
IF = 200 mA
- 410 470
IF = 500 mA
- 550 620
Unit
µA
mV
AC Characteristics
Diode capacitance
CT -
VR = 5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
6 10 pF
www.DataSheet4U.com
2 2007-04-19


Part Number BAS3005B
Description Medium Power AF Schottky Diode
Maker Infineon Technologies
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BAS3005B Datasheet PDF






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