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Infineon Technologies Electronic Components Datasheet

BAS3010A Datasheet

Medium Power AF Schottky Diode

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Medium Power AF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Very low forward voltage
(typ. 0.41V @ IF = 1A)
For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3010A...
BAS 3010A-03W

Type
BAS3010A-03W
Package
SOD323
Configuration
single
Marking
4/ blue
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Diode reverse voltage2)
VR
Forward current2)
IF
Average rectified forward current (50/60Hz, sinus) IFAV
30
1
1
Repetitive peak forward current
(tp 1 ms, D 0.5)
I FRM
3.5
Non-repetitive peak surge forward current
(t 10ms)
I FSM
10
Junction temperature
Tj 150
www.DOaptaeShraeetti4nUg.ctoemmperature range
Storage temperature
Top -65 ... 125
Tstg -65 ... 150
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.
Unit
V
A
°C
1 2007-04-10


Infineon Technologies Electronic Components Datasheet

BAS3010A Datasheet

Medium Power AF Schottky Diode

No Preview Available !

BAS3010A...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
82
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current2)
VR = 5 V
IR
- 5 25
VR = 10 V
- 10 50
VR = 30 V
- 40 200
Forward voltage2)
VF
IF = 1 mA
- 170 220
IF = 10 mA
- 220 270
IF = 100 mA
- 290 340
IF = 500 mA
- 350 410
IF = 1 A
- 410 470
Unit
µA
mV
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
CT -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulsed test: tp = 300 µs; D = 0.01
28 35 pF
www.DataSheet4U.com
2 2007-04-10


Part Number BAS3010A
Description Medium Power AF Schottky Diode
Maker Infineon Technologies
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BAS3010A Datasheet PDF





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