BAT24-02LS diode equivalent, silicon schottky diode.
which frequencies are as high as 24 GHz.
Feature list
* Low inductance LS = 0.2 nH (typical)
* Low capacitance C.
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for.
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