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BAT24-02LS Datasheet Silicon Schottky Diode

Manufacturer: Infineon

General Description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection.

Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz.

Overview

BAT24-02LS Single silicon RF Schottky diode Product.