BSC118N10NSG Power-Transistor

Infineon Technologies

BSC118N10NSG Description

BSC118N10NS G OptiMOS™2 Power-Transistor .

BSC118N10NSG Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 100 V 11.8 mΩ 71 A
* 150 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified ac

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BSC118N10NSG Datasheet Preview — Preview of BSC118N10NSG PDF

Datasheet Details

Part number: BSC118N10NSG
Manufacturer: Infineon ↗ Technologies
File Size: 435.64 KB
Datasheet: BSC118N10NSG-InfineonTechnologies.pdf
Description: Power-Transistor

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Power-Transistor Infineon Technologies

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