BSF053N03LTG Datasheet | Infineon

.. BSF053N03LT G Opti MOS®2 Power-MOSFET Features - Pb-free plating; Ro HS pliant - Dual sided cooling - Low profile (<0.7 mm) - Avalanche rated - Qualified for consumer level application - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Optimized for high switching frequency DC/DC converter - Low parasitic inductance Product Summary V DS R DS(on),max ID 30 5.3 71 V mΩ A Can PAK - patible with Direct FET® package ST footprint and outline 1) Type BSF053N03LT G Package Can PAK Outline ST Marking 3003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R th JA=58 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 71 45 16 284 50 75 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=44 A, R GS=25 Ω m J V Direct FET® is a trademark of International Rectfier Corporation BSF053N03LT G uses Direct FET® technology licensed from International Rectifier Corporation Rev. 1.0 page 1 2008-01-18 .....