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OptiMOS™-P Power-Transistor
Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
BSO080P03S H
-30 V 8 m: -14.9 A
PG-DSO-8
Type BSO080P03S H
Package P-DSO-8
Marking lead free 080P3S Yes
Halogen free Yes
packing dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C1) T A=70 °C1) T A=25 °C2)
Value
Unit
10 secs steady state
-14.9
-12.6 A
-11.9
-10
-60
Avalanche energy, single pulse
E AS I D=-14.
BSO080P03SH Datasheet
