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BSO110N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS R DS(on),max
ID
V GS=10 V V GS=4.5 V
30 V 11 mΩ 13.9 12.1 A
PG-DSO-8
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type BSO110N03MS G
Package PG-DSO-8
Marking 110N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C
V GS=4.
BSO110N03MSG Datasheet
