Infineon Technologies Electronic Components Datasheet

ESD5V3S1B-02LRH Datasheet

Silicon TVS Diode

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Silicon TVS Diode

• ESD / transient protection of data and power lines

in low voltage applications according to:

IEC61000-4-2 (ESD): ± 25 kV (air) 20 kV (contact)

IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)

IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs)

• Small form factor (0402 inch):

1.0 x 0.6 x 0.4 mm3

• Bi-directional, symmetrical

working voltage up to ± 5.3 V

• Ultralow and symmetric clamping voltage

• Ultralow dynamic resistance 0.4 Ω

• Very fast response time

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Applications

Recommended to protect audio lines /

microphone lines / speaker and

headset systems in:

• Mobile phones

• Mobile TV

• Set top boxes

• MP3 players

• Minidisc players

• Portable entertainment electronics

ESD5V3S1B-02LRH

Type

ESD5V3S1B-02LRH

Package

TSLP-2-17

Configuration

1 line, bi-directional

Marking

2009-12-07

Datasheet pdf - http://www.DataSheet4U.net/

Infineon Technologies Electronic Components Datasheet

ESD5V3S1B-02LRH Datasheet

Silicon TVS Diode

No Preview Available !

www.DataSheet.co.kr

ESD5V3S1B-02LRH

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

ESD air / contact discharge1)

Peak pulse current (tp = 8 / 20 µs)2)

Peak pulse power (tp = 8 / 20 µs2)

Operating temperature range

VESD

Ipp

Ppk

Top

Storage temperature

Tstg

Value

25 / 20

5.5

-55...125

-65...150

Unit

°C

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

Characteristics

Reverse working voltage

Breakdown voltage

I(BR) = 1 mA

Reverse current

VR = 3.3 V

Clamping voltage

IPP = 1 A, tp = 8/20 µs2)

IPP = 3.5 A, tp = 8/20 µs2)

IPP = 5.5 A, tp = 8/20 µs2)

VRWM

V(BR)

VCL

-5.3 - 5.3

6- -

- - 0.1

- 8 10

- 10 12

- 11 13

Diode capacitance

VR = 0 V, f = 1 MHz

VR = 2.5 V, f = 1 MHz

Dynamic resistance3) (tp = 30 ns)

- 17.5 20

- 14.5 -

RD - 0.4 -

1VESD according to IEC61000-4-2

2Ipp according to IEC61000-4-5

3 according to TLP tests

Unit

µA

Ω

2009-12-07

Datasheet pdf - http://www.DataSheet4U.net/

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ESD5V3S1B-02LRH Datasheet

Silicon TVS Diode

ESD5V3S1B-02LRH Datasheet

Silicon TVS Diode

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