ESD5V3S1B-02LRH Datasheet | Infineon

.Data Sheet.co.kr Silicon TVS Diode - ESD / transient protection of data and power lines in low voltage applications according to: IEC61000-4-2 (ESD): ± 25 k V (air) 20 k V (contact) IEC61000-4-4 (EFT): 50 A / 2.5 k V (5/50 ns) IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs) - Small form factor (0402 inch): 1.0 x 0.6 x 0.4 mm 3 - Bi-directional, symmetrical working voltage up to ± 5.3 V - Ultralow and symmetric clamping voltage - Ultralow dynamic resistance 0.4 Ω - Very fast response time - Pb-free (Ro HS pliant) package - Qualified according AEC Q101 Applications Remended to protect audio lines / microphone lines / speaker and headset systems in: - Mobile phones - Mobile TV - Set top boxes - MP3 players - Minidisc players - Portable entertainment electronics Type ESD5V3S1B-02LRH Package TSLP-2-17 Configuration 1 line, bi-directional Marking E1 2009-12-07 Datasheet pdf - http://..net/ .Data Sheet.co.kr Maximum Ratings at TA = 25°C, unless otherwise specified Parameter ESD air / contact discharge 1) Peak pulse current ( tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs2) Operating temperature range Storage temperature Symbol VESD I pp Ppk T op T stg Value 25 / 20 5.5 80 -55...125 -65...150 Unit k V A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 m A Reverse current VR = 3.3 V Clamping voltage IPP = 1 A, tp = 8/20 µs2) IPP = 3.5 A, tp = 8/20 µs2) IPP = 5.5 A, tp = 8/20 µs2) Diode capacitance VR = 0 V, f = 1 MHz VR = 2.5 V, f = 1 MHz Dynamic resistance3) (tp = 30 ns) 1V 2I 3 Unit max. 5.3 0.1 µA V V typ. - VRWM V(BR) IR VCL -5.3...