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H15R1203 Datasheet, Infineon Technologies

H15R1203 igbt equivalent, reverse conducting igbt.

H15R1203 Avg. rating / M : 1.0 rating-11

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H15R1203 Datasheet

Features and benefits


*Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly
*TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparamete.

Application

offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallel.

Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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H15R1203 Page 1 H15R1203 Page 2 H15R1203 Page 3

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