IGP01N120H2 Datasheet | Infineon

IGP01N120H2, IGD01N120H2 High Speed 2-Technology - Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation High Speed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A nd IGB01N120H2 - P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type IGP01N120H2 IGB01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140k Hz TC = 100°C, f = 140k Hz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09m J 0.09m J 0.09m J Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) Ordering Code Q67040-S4593 Q67040-S4592 Q67040-S4591 Power Semiconductors Rev. 2, Mar-04 IGP01N120H2, IGD01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB1) Rth JA P-TO-263 (D2PAK) Rth JA P-TO-220-3-1 Rth JC Symbol Conditions IGB01N120H2 Max. Value 4.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0 µ A VCE(sat) V G E = 15V, I C = 1A T j = 25 ° C T j = 15 0 ° C V G E = 10V, I C = 1A , T j = 25 ° C Gate-emitter threshold voltage Zero gate voltage collector...