IGP01N120H2 Datasheet Text
IGP01N120H2, IGD01N120H2
HighSpeed 2-Technology
- Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A nd
IGB01N120H2
C
G
E
- P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
P-TO-252-3-1 (D-PAK) (TO-252AA)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type IGP01N120H2 IGB01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK)
2
Ordering Code Q67040-S4593 Q67040-S4592 Q67040-S4591
Power Semiconductors
1
Rev. 2, Mar-04
IGP01N120H2, IGD01N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
- case Thermal resistance, junction
- ambient SMD version, device on PCB1) RthJA P-TO-263 (D2PAK) RthJA P-TO-220-3-1 RthJC Symbol Conditions
IGB01N120H2...