IGW08T120
IGW08T120 is IGBT manufactured by Infineon.
Preliminary Trench Sto P Series
Low Loss IGBT in Trench and Fieldstop technology
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- - Approx. 1.0V reduced VCE(sat) pared to BUP305D Short circuit withstand time
- 10µs Designed for :
- Frequency Converters
- Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge
E plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 1200V IC 8A VCE(sat),Tj=25°C 1.7V Tj,max 150°C Symbol VCE IC 16 8 ICpul s IF 16 8 VGE
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Type IGW08T120
Package TO-247AC
Ordering Code Q67040-S4513
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area
.. VCE ≤ 1200V,
Value 1200
Unit V A
24 24
Tj ≤ 150°C
Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
±20 10 70 -40...+150 -55...+150 260
V µs W °C t SC Ptot Tj Tstg
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Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Sep-03
Power Semiconductors
Preliminary Trench Sto P Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance,...
