IGW50N65F5 - IGBT

Features

High speed F5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low QG.
Ideal fit with SIC Schottky Diode in boost converters.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

IGW50N65F5 igbt by Infineon Technologies - Datasheet Preview

Datasheet Details

Part number	IGW50N65F5
Manufacturer	Infineon
File Size	1.78 MB
Description	IGBT
Datasheet	IGW50N65F5 Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW50N65F5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Mar 4, 2015 |