IHW15N120R - Reverse Conducting IGBT

Features

Powerful monolithic Body Diode with very low forward voltage.
Body diode clamps negative voltages.
Trench and Fieldstop technology for 1200 V.

IHW15N120R reverse conducting igbt by Infineon Technologies - Datasheet Preview

Datasheet Details

Part number	IHW15N120R
Manufacturer	Infineon
File Size	408.75 KB
Description	Reverse Conducting IGBT
Datasheet	IHW15N120R Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW20N120R VCE 1200V IC 20A VCE(sat),Tj=25°C 1.

Published: Feb 26, 2008 |