IHW20N120R2 - Reverse Conducting IGBT

Datasheet Summary

Features

Powerful monolithic Body Diode with very low forward voltage.
Body diode clamps negative voltages.
Trench and Fieldstop technology for 1200 V.

Infineon Technologies

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Datasheet Details

Part number	IHW20N120R2
Manufacturer	Infineon Technologies
File Size	413.95 KB
Description	Reverse Conducting IGBT
Datasheet	IHW20N120R2 Datasheet
Additional preview pages of the IHW20N120R2 datasheet.

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Full PDF Text Transcription

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IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 www.DataSheet4U.com • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.

Published: Oct 21, 2008 |