Datasheet4U Logo Datasheet4U.com

IHW30N100R - Reverse Conducting IGBT

Key Features

  • 1.5V Forward voltage of monolithic body Diode.
  • Full Current Rating of monolithic body Diode.
  • Specified for TJmax = 175°C.
  • Trench and Fieldstop technology for 1000 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IHW30N110R3 IGBT Infineon
IHW30N120R2 IGBT Infineon
IHW30N120R3 IGBT Infineon
IHW30N120R5 IGBT Infineon
IHW30N135R3 IGBT Infineon

Other Datasheets by Infineon

Part Number Description
IHW30N100T Low Loss DuoPack
IHW30N120R IGBT
IHW30N60T IGBT
IHW30N90R Reverse Conducting IGBT
IHW30N90T IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25°C 1.