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IHW30N100R - Reverse Conducting IGBT

Features

  • 1.5V Forward voltage of monolithic body Diode.
  • Full Current Rating of monolithic body Diode.
  • Specified for TJmax = 175°C.
  • Trench and Fieldstop technology for 1000 V.

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Datasheet Details

Part number IHW30N100R
Manufacturer Infineon Technologies
File Size 409.05 KB
Description Reverse Conducting IGBT
Datasheet download datasheet IHW30N100R Datasheet
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www.DataSheet4U.com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25°C 1.
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