IHW30N120R - IGBT

Features

Powerful monolithic Body Diode.
Specified for TJmax = 175°C.
Trench and Fieldstop technology for 1200 V.

IHW30N120R igbt by Infineon Technologies - Datasheet Preview

Datasheet Details

Part number	IHW30N120R
Manufacturer	Infineon
File Size	0.99 MB
Description	IGBT
Datasheet	IHW30N120R Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com IHW30N120R Soft Switching Series q C IGBT with monolithic body diode for soft switching Applications Features: • Powerful monolithic Body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant Applications: • Inductive Cooking • Soft Switching Applications Type IHW30N120R VCE 1200V IC 30A VCE(sat),Tj=25°C 1.

Published: Feb 26, 2008 |