IHW30N90R Datasheet | Infineon

Features : - 1.5V typical saturation voltage of IGBT - Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI 1 - Qualified according to JEDEC for target applications - Application specific optimisation of inverse diode - Pb-free lead plating; Ro HS pliant Applications: - Microwave Oven - Soft Switching Applications for ZCS Type IHW30N90R VCE 900V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking H30R90 Package PG-TO-247-3-21 PG-TO-247-3-21 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 60 30 90 ±20 ±25 454 -40...+175 -55...+175 260 W °C °C V Symbol VCE IC 60 30 90 90 Value 900 Unit V A J-STD-020 and JESD-022 1 Rev. 2.0 July 06 Power Semiconductors .. Soft Switching Series IHW30N90R q Max. Value 0.33 0.33 40 Unit K/W Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Diode forward voltage VF V G E = 0V , I F = 3 0 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Gate-emitter threshold voltage Zero gate...