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IKW25N120H3 - High speed IGBT

Description

Type IKW25N120H3 C G E Package PG-TO247-3 Marking K25H1203 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-09-08 IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology Table of contents Table of contents

Features

  • VCE = 1200 V.
  • IC = 25 A.
  • Very low VCE,sat.
  • Low EMI.
  • Very soft, fast recovery antiparallel diode.
  • Maximum junction temperature Tvjmax = 175°C.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number IKW25N120H3
Manufacturer Infineon Technologies
File Size 1.60 MB
Description High speed IGBT
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IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery antiparallel diode Features • VCE = 1200 V • IC = 25 A • Very low VCE,sat • Low EMI • Very soft, fast recovery antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Uninterruptible power supplies • Welding converters • Converters with high switching frequency G C E Description Type IKW25N120H3 C G E Package PG-TO247-3 Marking K25H1203 Datasheet www.infineon.
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