* C Low VCE(sat) L5 technology offering
* Very low collector-emitter saturation voltage VCEsat
* Best-in-Class tradeoff between conduction and switching losses
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Qualif
IKW30N65NL5 Datasheet (2.05 MB)
IKW30N65NL5
Infineon ↗ Technologies
2.05 MB
Igbt.
IGBT Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 fast and soft antiparallel diode IKW30N65NL5 650V DuoPack IGBT and diode Low.
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