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IPA045N10N3G - MOSFET

General Description

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1 Maximum ratings .

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.5 mΩ ID 64 A TO-220-FP Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IPA045N10N3 G Package PG-TO220-FP Marking 045N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.