IPA057N08N3G
IPA057N08N3G is MOSFET manufactured by Infineon.
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
- Fully isolated package (2500 VAC; 1 minute)
Type
IPA057N08N3 G
IPA057N08N3 G
Product Summary VDS RDS(on),max ID
80 V 5.7 m W 60 A
Package Marking
PG-TO220-FP 057N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2) T C=100 °C
60 43
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4) E...
