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Infineon Technologies Electronic Components Datasheet

IPA50R350CP Datasheet

Power-Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC0) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPA50R350CP
550 V
0.350
19 nC
TO220 Full PAK
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• CCM PFC for Notebook adapter, PDP and LCD TV
• PWM for Notebook adapter, PDP and LCD TV
Type
IPA50R350CP
Package
PG-TO220FP
Marking
5R350P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
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ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.7 A, V DD=50 V
I D=3.7 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M2.5 screws
Rev. 2.1
page 1
Value
10
6
22
246
0.37
3.7
50
±20
±30
32
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2009-07-23


Infineon Technologies Electronic Components Datasheet

IPA50R350CP Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current1)
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA50R350CP
Value
5.6
22
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 3.9 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.37 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
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Gate resistance
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=5.6 A,
T j=25 °C
V GS=10 V, I D=5.6 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.32 0.35
0.80
2.2
-
-
Rev. 2.1
page 2
2009-07-23


Part Number IPA50R350CP
Description Power-Transistor
Maker Infineon Technologies
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IPA50R350CP Datasheet PDF






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