IPA50R399CP
IPA50R399CP is Power-Transistor manufactured by Infineon.
Cool MOSTM Power Transistor
Features
- Lowest figure-of-merit R ON x Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Pb-free lead plating; Ro HS pliant
- Quailfied according to JEDEC0) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.399 17 V Ω n C
TO-220 Full PAK
Cool MOS CP is designed for:
- Hard and softswitching SMPS topologies
- DCM PFC for Lamp Ballast
- PWM-Stages Lamp Ballast, LCD and PDP TV Type IPA50R399CP Package PG-TO220FP Marking 5R399P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage .. Power dissipation Operating and storage temperature Mounting torque I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) P tot T j, T stg M2.5 screws T C=25 °C T C=25 °C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V Value 9 6 20 215 0.33 3.3 50 ±20 ±30 83 -55 ... 150 60 W °C Ncm A V/ns V m J Unit A
Rev. 2.1 page 1
2009-07-23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current 1) Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 4.9 20 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction
- case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R th JC R th JA T sold leaded 1.6 mm (0.063 in.) from case for 10 s 4 62 260 °C K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=0.33 m A V DS=500 V, V GS=0 V, T j=25 °C V...
