IPA60R250CP Datasheet | Infineon

Features - Lowest figure-of-merit RONx Qg - Ultra low gate charge - Extreme dv/dt rated - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Cool MOS CP is designed for: - Hard switching SMPS topologies Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ 650 V 0.250 Ω 26 n C PG-TO220 FP Type IPA60R250CP Package PG-TO220FP Marking 66RR225909PP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current2) Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Avalanche current, repetitive t 3),4) AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS E AR I AR dv /dt V GS I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V V DS=0...480 V static AC (f >1 Hz) P tot T C=25 °C T j, T stg M2.5...