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Infineon Technologies Electronic Components Datasheet

IPB014N06N Datasheet

Power Transistor

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Type
OptiMOSTM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
IPB014N06N
60 V
1.4 mW
180 A
119 nC
106 nC
Type
IPB014N06N
Package
TO263-7
Marking
014N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V,T C=100 °C
180 A
180
V GS=10 V, T C=25 °C,
R thJA =50K/W
34
Pulsed drain current2)
I D,pulse T C=25 °C
720
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2012-12-20


Infineon Technologies Electronic Components Datasheet

IPB014N06N Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPB014N06N
Value
214
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 0.7 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=143 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
V GS=20 V, V DS=60 V
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=25 A
RG
-
-
-
-
10 100 nA
1.2 1.4 mW
1.5 2.1
1.6 2.4 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
120
230
-S
Rev. 2.2
page 2
2012-12-20


Part Number IPB014N06N
Description Power Transistor
Maker Infineon Technologies
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