IPB014N06N
IPB014N06N is Power Transistor manufactured by Infineon.
Type
OptiMOSTM Power-Transistor
Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS pliant
- Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 1.4 mW 180 A
119 nC 106 nC
Type
Package
TO263-7
Marking
014N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V,T C=100 °C
180 A 180
V GS=10 V, T C=25 °C, R thJA =50K/W
Pulsed drain...
