Datasheet4U Logo Datasheet4U.com

IPB042N10N3G - 100V MOSFET

General Description

.

.

.

.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB042N10N3G N-Channel MOSFET INCHANGE
IPB042N10N3 100V MOSFET Infineon
IPB042N03L Power-Transistor Infineon
IPB040N08NF2S MOSFET Infineon
IPB041N04N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB042N03LG Power-Transistor
IPB041N04NG Power-Transistor
IPB048N06L Power-Transistor
IPB048N06LG Power-Transistor
IPB049N06L3G Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB042N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.2 mΩ ID 137 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB042N10N3 G Package PG-TO 263-3 Marking 042N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.