IPB107N20N3G
IPB107N20N3G is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
200 V 10.7 m W 88 A
Type
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package Marking
PG-TO263-3 107N20N
PG-TO220-3 110N20N
PG-TO262-3 110N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current Pulsed drain current2)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt dv /dt
Gate source voltage
V GS
Power dissipation Operating and storage...
