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IPB200N15N3G Datasheet Power-Transistor

Manufacturer: Infineon

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Overview

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPB200N15N3G N-Channel MOSFET INCHANGE
Infineon Logo IPB200N15N3 Power-Transistor Infineon

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