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IPB200N15N3G - Power-Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB200N15N3G
Manufacturer Infineon Technologies
File Size 0.97 MB
Description Power-Transistor
Datasheet download datasheet IPB200N15N3G Datasheet
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IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 Marking 200N15N 200N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO262-3 200N15N PG-TO220-3 200N15N Value Unit Continuous drain current Pulsed drain
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