IPB65R190E6 transistor equivalent, power transistor.
* Extremely low losses due to very low FOM Rdson*Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* JEDEC1) qualified, Pb-free plating, .
even more efficient, more compact, lighter, and cooler.
Features
* Extremely low losses due to very low FOM Rdson*Qg.
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with hi.
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