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IPB65R190E6

IPB65R190E6 is Power Transistor manufactured by Infineon.
IPB65R190E6 datasheet preview

IPB65R190E6 Datasheet

Part number IPB65R190E6
Download IPB65R190E6 Datasheet PDF
File Size 2.03 MB
Manufacturer Infineon
Description Power Transistor
IPB65R190E6 page 2 IPB65R190E6 page 3

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Manufacturer Part Number Description
INCHANGE Logo Inchange Semiconductor IPB65R190E6 N-Channel MOSFET

All IPB65R190E6 datasheets

IPB65R190E6 Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series bines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.

IPB65R190E6 Key Features

  • Extremely low losses due to very low FOM Rdson-Qg and Eoss
  • Very high mutation ruggedness
  • Easy to use/drive
  • JEDEC1) qualified, Pb-free plating, Halogen free

IPB65R190E6 Applications

  • Extremely low losses due to very low FOM Rdson-Qg and Eoss
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