• Part: IPB80N06S2L-06
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 152.39 KB
Download IPB80N06S2L-06 Datasheet PDF
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Datasheet Summary

OptiMOS® Power-Transistor Features - N-channel Logic Level - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested IPB80N06S2L-06 IPP80N06S2L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 6.3 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-06 IPP80N06S2L-06 Package Ordering Code Marking PG-TO263-3-2 SP0002-18163 2N06L06 PG-TO220-3-1 SP0002-18824 2N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value...