• Part: IPD053N08N3G
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 326.90 KB
IPD053N08N3G Datasheet (PDF) Download
Infineon
IPD053N08N3G

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21 V mW A Type