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IPD053N08N3G - Power-Transistor

Infineon Technologies

The IPD053N08N3G by Infineon Technologies is a Power-Transistor. Below is the official datasheet preview.

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IPD053N08N3G Power-Transistor by Infineon Technologies - Datasheet Preview — Official preview page of the IPD053N08N3G Power-Transistor datasheet (Infineon Technologies).

Datasheet Details

Part number	IPD053N08N3G
Manufacturer	Infineon Technologies
File Size	326.90 KB
Description	Power-Transistor
Datasheet	IPD053N08N3G_InfineonTechnologies.pdf
Additional preview pages of the IPD053N08N3G datasheet.

IPD053N08N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Aug 30, 2011 |