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IPD053N08N3G Datasheet - Infineon Technologies

Power-Transistor

IPD053N08N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to

IPD053N08N3G Datasheet (326.90 KB)

Preview of IPD053N08N3G PDF

Datasheet Details

Part number:

IPD053N08N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

326.90 KB

Description:

Power-transistor.

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IPD053N08N3G Power-Transistor Infineon Technologies

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