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Infineon Technologies Electronic Components Datasheet

IPD053N08N3G Datasheet

Power-Transistor

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IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
80
5.3
90
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
previous engineering
sample code:
IPD06CN08N
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
V
mW
A
Type
IPD053N08N3 G
Package
Marking
PG-TO252-3
053N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90
90
360
190
±20
150
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2014-05-19


Infineon Technologies Electronic Components Datasheet

IPD053N08N3G Datasheet

Power-Transistor

No Preview Available !

IPD053N08N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
V DS=80 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=90 A
V GS=6 V, I D=45 A
Gate resistance
RG
80
2
-
-
-
-
-
-
- -V
2.8 3.5
0.1 1 µA
10 100
1 100 nA
4.4 5.3 mW
5.8 9.5
2.2 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=90 A
56
111
-S
1)J-STD20 and JESD22
2) See figure 3
3) Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm2 (one layer, 70
µm thick) copper area for drain
Rev. 1.1
page 2
2014-05-19


Part Number IPD053N08N3G
Description Power-Transistor
Maker Infineon Technologies
Total Page 9 Pages
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