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Infineon Technologies Electronic Components Datasheet

IPD220N06L3G Datasheet

Power-Transistor

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Type
OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary
V DS
R DS(on),max
ID
60 V
22 m
30 A
Package
Marking
PG-TO-252-3
220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Value
30
21
120
13
±20
36
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2008-12-09


Infineon Technologies Electronic Components Datasheet

IPD220N06L3G Datasheet

Power-Transistor

No Preview Available !

IPD220N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
min.
Values
typ.
Unit
max.
- - 4.2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=30 A
- 1 100 nA
- 17.8 22.0 m
V GS=4.5 V, I D=15 A
- 27.4 39.8
Gate resistance
Transconductance
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
16
0.9
32
-
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2008-12-09


Part Number IPD220N06L3G
Description Power-Transistor
Maker Infineon Technologies
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IPD220N06L3G Datasheet PDF






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