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IPD22N08S2L-50 - Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel Logic Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested IPD22N08S2L-50 Product Summary V DS R DS(on),max ID 75 V 50 mΩ 25 A PG-TO252-3-11 Type IPD22N08S2L-50 Package Marking PG-TO252-3-11 2N08L50 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Condition.

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Datasheet Details

Part number IPD22N08S2L-50
Manufacturer Infineon Technologies
File Size 147.35 KB
Description Power-Transistor
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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD22N08S2L-50 Product Summary V DS R DS(on),max ID 75 V 50 mΩ 25 A PG-TO252-3-11 Type IPD22N08S2L-50 Package Marking PG-TO252-3-11 2N08L50 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=22A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Valu
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