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Infineon Technologies Electronic Components Datasheet

IPD25N06S4L-30 Datasheet

Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD25N06S4L-30
Product Summary
VDS
RDS(on),max
ID
60 V
30 mW
25 A
PG-TO252-3-11
Type
IPD25N06S4L-30
Package
Marking
PG-TO252-3-11 4N06L30
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=12.5A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
25
17
92
12
25
±16
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2015-10-07


Infineon Technologies Electronic Components Datasheet

IPD25N06S4L-30 Datasheet

Power-Transistor

No Preview Available !

IPD25N06S4L-30
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 5.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=8µA
60 -
-V
1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=60V, V GS=0V,
T j=25°C
- 0.01 1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=60V, V GS=0V,
T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=12.5A
V GS=10V, I D=25A
-
-
-
-
5 100
- 100 nA
36 56 mW
23 30
Rev. 1.1
page 2
2015-10-07


Part Number IPD25N06S4L-30
Description Power-Transistor
Maker Infineon Technologies
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IPD25N06S4L-30 Datasheet PDF






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