IPD25N06S4L-30
IPD25N06S4L-30 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
60 V 30 mW 25 A
PG-TO252-3-11
Type IPD25N06S4L-30
Package
Marking
PG-TO252-3-11 4N06L30
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T...
