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Infineon Technologies Electronic Components Datasheet

IPD70P04P4-09 Datasheet

Power-Transistor

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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70P04P4-09
Product Summary
V DS
R DS(on)
ID
-40 V
8.9 mΩ
-73 A
PG-TO252-3-313
Type
IPD70P04P4-09
Package
Marking
PG-TO252-3-313 4P0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=-36A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-73
-52
-292
24
-73
±20
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2010-05-26


Infineon Technologies Electronic Components Datasheet

IPD70P04P4-09 Datasheet

Power-Transistor

No Preview Available !

IPD70P04P4-09
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA
-V GS(th) V DS=V GS, I D=-120µA
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-40
2.0
-
-
3.0
-0.04
-V
4.0
-1 µA
V DS=-32V, V GS=0V,
T j=125°C2)
-
-20 -200
I GSS
V GS=-20V, V DS=0V
-
- -100 nA
R DS(on) V GS=-10V, I D=-70A
- 6.4 8.9 mΩ
Rev. 1.0
page 2
2010-05-26


Part Number IPD70P04P4-09
Description Power-Transistor
Maker Infineon Technologies
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IPD70P04P4-09 Datasheet PDF






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