IPD70P04P4-09
IPD70P04P4-09 is Power-Transistor manufactured by Infineon.
OptiMOS®-P2 Power-Transistor
Features
- P-channel
- Normal Level
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- 100% Avalanche tested
Product Summary V DS R DS(on) ID
-40 V 8.9 mΩ -73 A
PG-TO252-3-313
Type IPD70P04P4-09
Package
Marking
PG-TO252-3-313 4P0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=-36A
Avalanche current, single pulse
I AS
- Gate source...
