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Infineon Technologies Electronic Components Datasheet

IPD70P04P4L-08 Datasheet

Power-Transistor

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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70P04P4L-08
Product Summary
V DS
R DS(on)
ID
-40 V
7.8 mW
-70 A
PG-TO252-3-313
Type
IPD70P04P4L-08
Package
Marking
PG-TO252-3-313 4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25°C
I D=-35A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-70
-55
-280
24
-70
±162)
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-03-14


Infineon Technologies Electronic Components Datasheet

IPD70P04P4L-08 Datasheet

Power-Transistor

No Preview Available !

IPD70P04P4L-08
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
-
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 2.0 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -40 -
-V
V GS(th) V DS=V GS, I D=-120µA -1.2 -1.7 -2.2
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-
-0.05
-1 µA
V DS=-32V, V GS=0V,
T j=125°C1)
-
-20 -200
I GSS
V GS=-16V, V DS=0V
-
- -100 nA
R DS(on) V GS=-4.5V, I D=-40A
V GS=-10V, I D=-70A
-
-
9.0 12.9 mW
5.7 7.8
Rev. 1.0
page 2
2011-03-14


Part Number IPD70P04P4L-08
Description Power-Transistor
Maker Infineon Technologies
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IPD70P04P4L-08 Datasheet PDF






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