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IPD90R1K2C3 - Power Transistor

Key Features

  • Lowest figure-of-merit RON x Qg.
  • Extreme dv/dt rated.
  • High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2 Ω 28 nC.
  • Qualified according to JEDEC1) for target.

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IPD90R1K2C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.