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Infineon Technologies Electronic Components Datasheet

IPI70N10S3-12 Datasheet

Power-Transistor

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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
11.3 m
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N10S3-12
IPI70N10S3-12
IPP70N10S3-12
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N1012
3N1012
3N1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-02-12


Infineon Technologies Electronic Components Datasheet

IPI70N10S3-12 Datasheet

Power-Transistor

No Preview Available !

IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.2 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=83µA
100 -
2.0 3.0
-V
4.0
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=80 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=70A
-
-
-
1 100
- 100 nA
9.7 11.6 m
V GS=10V, I D=70A,
SMD version
- 9.4 11.3
Rev. 1.0
page 2
2008-02-12


Part Number IPI70N10S3-12
Description Power-Transistor
Maker Infineon Technologies
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IPI70N10S3-12 Datasheet PDF






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