IPP080N06NG Datasheet | Infineon

.. IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features - Low gate charge for fast switching applications - N-channel enhancement - normal level - 175 °C operating temperature - Avalanche rated - Pb-free lead plating, RoHS pliant Product Summary V DS R DS(on),max ID SMDversion 60 7.7 80 V mΩ A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N P-TO220-3-1 080N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage...