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IPP111N15N3G - Power Transistor

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen free.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for IPP111N15N3G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPP111N15N3G. For precise diagrams, and layout, please refer to the original PDF.

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10....

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),max (TO263) ID 150 10.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo IPP111N15N3 Power-Transistor Infineon
INCHANGE Logo IPP111N15N3 N-Channel MOSFET INCHANGE

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