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IPP80N04S2-04 - Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free) PG-TO263-3-2.
  • Ultra low Rds(on).
  • 100% Avalanche tested IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.4 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N04S2-04 IPP80N04S2-04 IPI80N04S2-04 Package PG-TO263-3-2 PG-TO220-3-1 PG-T.

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Datasheet Details

Part number IPP80N04S2-04
Manufacturer Infineon Technologies
File Size 156.71 KB
Description Power-Transistor
Datasheet download datasheet IPP80N04S2-04 Datasheet
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Full PDF Text Transcription

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.
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