Datasheet Summary
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO252) ID
85 V 25 mΩ 35 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
Type
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package Marking
PG-TO263-3 26CNE8N
PG-TO252-3 25CNE8N
PG-TO262-3 26CNE8N
PG-TO220-3 26CNE8N
PG-TO251-3 25CNE8N
Maximum ratings, at T j=25 °C, unless...