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IPW60R165CP - CoolMOS Power Transistor

Features

  • Lowest figure-of-merit RONxQg.
  • Ultra low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IPW60R165CP

Datasheet Details

Part number IPW60R165CP
Manufacturer Infineon Technologies
File Size 311.99 KB
Description CoolMOS Power Transistor
Datasheet download datasheet IPW60R165CP Datasheet
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CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPW60R165CP 650 V 0.165 Ω 39 nC PG-TO247-3-1 CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type IPW60R165CP Package Ordering Code PG-TO247-3-1 SP000095483 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Symbol Conditions ID I D,pulse T C=25 °C T C=100 °C T C=25 °C E AS I D=7.
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