IPW60R299CP
IPW60R299CP is CoolMOS Power Transistor manufactured by Infineon.
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Cool MOSTM Power Transistor
Features
- Lowest figure-of-merit R ONx Qg
- Ultra low gate charge
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.299 Ω 22 n C
PG-TO247-3-1
Cool MOS CP is specially designed for: Hard switching SMPS topologies
Type IPW60R299CP
Package PG-TO247-3-1
Ordering Code SP000103251
Marking 6R299P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 °C T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V Value 11 7 34 290 0.44 m J Unit A
4.4 50 ±20 ±30 96 -55 ... 150 60
A V/ns V
W °C Ncm 2006-04-04
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Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 34 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction
- case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R th JC R th JA T sold leaded 1.6 mm (0.063 in.) from case for 10 s 1.3 62 260 °C K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=0,44 m A V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V...
