K25N120 Datasheet Text
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SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
- 40lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter G
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1 for target applications
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C
2
C
E
PG-TO-247-3
VCE 1200V
IC 25A
Eoff 2.9mJ
Tj 150°C
Marking K25N120
Package PG-TO-247-3
Symbol VCE IC
Value 1200 46 25
Unit V A...