Part K50H603
Description High speed IGBT
Manufacturer Infineon
Size 2.06 MB
Infineon
K50H603
K50H603 reference image

Representative K50H603 image (package may vary by manufacturer)

Overview

  • verylowVCEsat
  • lowEMI
  • Verysoft,fastrecoveryanti-paralleldiode
  • maximumjunctiontemperature175°C
  • qualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • completeproductspectrumandPSpiceModels: G E