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Infineon Technologies Electronic Components Datasheet

PTFA180701F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFA180701E
PTFA180701F
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermally-
enhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz
5 50
4
Efficiency
40
3 30
2 20
1 10
EVM
00
30 32 34 36 38 40 42 44 46
Output Power, avg. (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
• Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, ƒ = 1836.6 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum
Gain
Drain Efficiency
@ 400 kHz
@ 600 kHz
Symbol Min Typ
EVM RMS
2.0
ACPR
— –62
ACPR
— –76
Gps — 16.5
ηD — 40.5
Max
Unit
%
dBc
dBc
dB
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2009-02-20


Infineon Technologies Electronic Components Datasheet

PTFA180701F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA180701E
PTFA180701F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
15.5
44
Typ
16.5
45
–30
Max
–29
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, ID = 550 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min Typ
65 —
——
——
— 0.125
2.0 2.5
——
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 70 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
201
1.15
–40 to +150
0.87
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA180701E V4
PTFA180701E V4
Package Type
H-36265-2
H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA180701E
PTFA180701F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03.1, 2009-02-20


Part Number PTFA180701F
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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PTFA180701F Datasheet PDF






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