PTFA180701F
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2
EDGE EVM Performance
VDD = 28 V, IDQ = 550 m A, ƒ = 1836.6 MHz
5 50
Features
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- 40
Thermally-enhanced packages, Pb-free and Ro HS-pliant Broadband internal matching Typical EDGE performance
- Average output power = 44 d Bm
- Gain = 16.5 d B
- Efficiency = 40.5%
- EVM = 2.0% Typical CW performance
- Output power at P- 1d B = 72 W
- Gain = 15.5 d B
- Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output...
