PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon Technologies

Part number	PTFA180701F
Manufacturer	Infineon Technologies
File Size	379.16 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA180701F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA180701F, PTFA180701E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA180701F datasheet.

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 5 50 Features.
40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE p.

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Published: Jul 11, 2011 |