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PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz
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Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2
2-Tone Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz
-25 45
Features
• • •
Drain Efficiency (%)
Pb-free, RoHS-compliant and thermally-enhanced package Broadband internal matching Typical EDGE performance at 1836.
PTFA182001E Datasheet
