PTFA182001E - Thermally-Enhanced High Power RF LDMOS FET

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Infineon Technologies

Part number	PTFA182001E
Manufacturer	Infineon Technologies
File Size	271.73 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA182001E Datasheet
Additional preview pages of the PTFA182001E datasheet.

The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz.

include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features.
Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced package Broadband internal matching Typical.

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Published: Jul 11, 2011 |