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PTFA182001E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
200 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE
applications from 1805 to 1880 MHz. Features include input and output
matching, and thermally-enhanced single-ended package with a
slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA182001E
Package H-30260-2
2-Tone Drive-up
VDD = 30 V, IDQ = 1600 m A,
ƒ = 1840 MHz, tone spacing = 1 MHz
-25 45
-30 Efficiency
-35
-40 IM3
40
35
30
-45 IM5 25
-50 20
-55 15
IM7
-60 10
-65 5
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Features
• Pb-free, RoHS-compliant and thermally-enhanced
package
• Broadband internal matching
• Typical EDGE performance at 1836.6 MHz, 30 V
- Average output power = 50 dBm
- Linear gain = 16.3 dB
- Efficiency = 37%
- EVM = 3.1%
- 400 kHz modulation = –61 dBc
- 600 kHz modulation = –76 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 49%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
RF Characteristics
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min Typ
15.7 16.6
37 38
— –31.5
Max
–30
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01, 2008-03-12


Infineon Technologies Electronic Components Datasheet

PTFA182001E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA182001E
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.8 A
VGS = 10 V, VDS = 0 V
Symbol Min Typ
V(BR)DSS
65
IDSS
——
IDSS
——
RDS(on)
— 0.05
VGS 2.0 2.5
IGSS
——
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 200 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA182001E V1
Package Type
H-30260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA182001E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01, 2008-03-12


Part Number PTFA182001E
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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