PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs

This page provides the datasheet information for the PTFB191501F, a member of the PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs family.

Product Overview

Infineon Technologies

Part number	PTFB191501F
Manufacturer	Infineon Technologies
File Size	322.39 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB191501F Datasheet
Additional preview pages of the PTFB191501F datasheet.

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F IMD (dBc) Efficiencydiscontinu(%)ed products Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.

Other Datasheets by Infineon Technologies

Published: Nov 27, 2016 |