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Infineon Technologies Electronic Components Datasheet

Q67040-S4366 Datasheet

Power Transistor

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Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.95
4.5
V
A
Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO220-3-31
3
12
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP04N60C3
SPB04N60C3
SPA04N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4366
P-TO263-3-2 Q67040-S4407
P-TO220-3-31 Q67040-S4413
Marking
04N60C3
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.4, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
4.5
2.8
13.5
130
4.51)
2.81)
13.5
130
0.4 0.4
4.5 4.5
±20 ±20
±30 ±30
50 31
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

Q67040-S4366 Datasheet

Power Transistor

No Preview Available !

www.DataSheet.co.kr
Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
- 2.5
-4
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=4.5A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=200µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=30V, VDS=0V
VGS=10V, ID=2.8A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
Values
typ.
-
700
3
0.5
-
-
0.85
2.3
0.95
max.
-
-
3.9
1
50
100
0.95
-
-
Unit
V
µA
nA
Page 2
2003-10-02
Datasheet pdf - http://www.DataSheet4U.net/


Part Number Q67040-S4366
Description Power Transistor
Maker Infineon Technologies
Total Page 14 Pages
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